| |
ACTIVE-TALK
Mode
Continual access of SRAM
average SRAM duty cycle @ 80% |
STANDBY-SLEEP
Mode
Intermittent burst access of SRAM For periodic
(1.28s, 2.56s, 5.12s ) Synchronization with
base station
average SRAM duty cycle @ 1.6% |
 |
 |
Fig. 1. Screen capture of SRAM
continual access in ACTIVE-TALK
of CDMA phone Channel
1 (YELLOW) : CSB Channel
2 (MAGENTA) : A0
|
Fig. 2. Screen capture of SRAM
periodic access in STANDBY-SLEEP
mode in every 2.56s Channel
1 (YELLOW) : CSB Channel
2 (MAGENTA) : A0 |
 |
Fig. 3. Test handset is
implemented with msm3100 silicon7
replace sram with ccsram (SV6P4016) |
|
| |
Battery Life of mobile handset
in ACTIVE-TALK
(Slotted paging mode 1, 2.56s) |
Battery Life of mobile handset in STANDBY-SLEEP
(Slotted paging mode 1, 2.56s) |
|
SRAM
|
CCSRAM |
Base-band
processor |
MSM3100 |
MSM3100 |
SRAM
Access Cycle |
70ns |
70ns |
Mobile
handset Power in ACTIVE MODE©ö |
300mA |
292mA |
SRAM
Power©÷ |
32mA |
24mA |
Battery
Life (600mAh) |
2h |
2.05h |
|
|
SRAM
|
CCSRAM |
Base-band
processor |
MSM3100 |
MSM3100 |
SRAM
Access Cycle |
70ns |
70ns |
Mobile
handset Power in ACTIVE MODE©ö |
2.99mA |
3.01mA |
SRAM
Power©÷ |
308.8uA |
321.6uA |
Battery
Life (600mAh) |
200.7h |
199.3h |
|
1) Measured result
comes from a CDMA Mobile Handset manufacturer,
measured at ?92db SNR
2) Worst case of low power SRAM major supplier
: ICC2=40mA, ISB1=12uA
Worst case of SILICON7 SV6P4016 : ICC2=30mA,
ISB1=100uA
* ACTIVE Power of mobile phone is highly dependent
on mobile handset manufacturer¡¯s application
|
| |