CompactCell SRAM for cost sensitive, mobile applications
 
The SV6P161x is an 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits. The SV6P161x utilizes SILICON7 CompactCell™ SRAM which was specifically developed for cost sensitive, low power computing and communications applications such as mobile cellular phone handsets, personal digital assistants, and other battery-operated consumer products. SV6P161x support special mode as Deep Power Down and Page Mode effective in 3G mobile application.
 
- Standard Asynchronous SRAM Interface
- SILICON7 CompactCell® SRAM for high density, low power and
- cost sensitive applications
- Organization : 1M x 16Bit
- Power Supply Voltage : 1.65V ~ 1.95V, 2.5V ~ 3.1V
- Package : 48-FBGA
- Deep Power Down : 5uA
- Page Access Time by 16 word : 30ns
- Tri-state output and TTL Compatible
 
Product No.
Vcc Range
ISB1
(Max)
Read/Write
Mode
Package
Pin Count
 Access Time(ns) Operating
Temp		 data-
sheet		 Product
Status
SV6P1615UFA-70I
2.7V~3.3V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
M.P
SV6P1616UFA-70I
2.7V~3.3V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
M.P
SV6P1617UFA-70I
2.7V~3.3V
100 μA
Async/
Page
fBGA
48
70
-40 ~ 85℃
M.P
SV6P1615UFB-70I
2.5V~3.1V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
Normal
Mode
E.S
SV6P1616UFB-70I
2.5V~3.1V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
DPD
Mode
E.S
SV6P1617UFB-70I
2.5V~3.1V
100 μA
Async/
Page
fBGA
48
70
-40 ~ 85℃
Page
Mode
E.S
SV6P1615RFA-70I
1.65V~1.95V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
Normal
Mode
E.S
SV6P1616RFA-70I
1.65V~1.95V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
DPD
Mode
E.S
SV6P1617RFA-70I
1.65V~1.95V
100 μA
Async/
Page
fBGA
48
70
-40 ~ 85℃
Page
Mode
E.S