CompactCell SRAM for cost sensitive, mobile applications
 
The SV6P321x is a 32Mb high speed, low power Static Random Access Memory(SRAM) organized as 2,097,152 words by 16 bits. The SV6P3216 utilizes SILICON7 CompactCell™ SRAM which was specifically developed for cost sensitive, low power computing and communications applications such as mobile cellular phone handsets, personal digital assistants, and other battery-operated consumer products. SV6P321x support special mode as Deep Power Down and Page Mode effective in 3G mobile application.
 
- Standard Asynchronous SRAM Interface
- SILICON7 CompactCell® SRAM for high density, low power and
- cost sensitive applications
- Organization : 2M x 16Bit
- Power Supply Voltage : 1.8V ~ 2.0V 2.7 ~ 3.3 V
- Package : 48-FBGA
- Deep Power Down : 5uA
- Page Access Time by 4 word : 30ns
- Page Operation by memory-mapped mode register setting(MMRS)
- Tri-state output and TTL Compatible
 
Product No.
Vcc Range
ISB1
(Max)
Read/Write
Mode
Package
Pin Count
 Access Time(ns) Operating
Temp		 data-
sheet		 Product
Status
SV6P3214UFA-70I
2.7V~3.3V
100 μA
Async.
fBGA
44
70
-40 ~ 85℃
M.P
SV6P3215UFA-70I
2.7V~3.3V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
M.P
SV6P3216UFA-70I
2.7V~3.3V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
M.P
SV6P3217UFA-70I
2.7V~3.3V
100 μA
Async.
fBGA
48
70
-40 ~ 85℃
M.P
SV6P3215RFA-85I
1.8V~2.0V
100 μA
Async.
fBGA
48
85
-40 ~ 85℃
M.P
SV6P3216RFA-85I
1.8V~2.0V
100 μA
Async.
fBGA
48
85
-40 ~ 85℃
M.P
SV6P3217RFA-85I
1.8V~2.0V
100 μA
Async.
fBGA
48
85
-40 ~ 85℃
M.P