CompactCell SRAM for cost sensitive, mobile applications
 
The 1.8Volt Silicon7’s CCSRAM provides high-performance asynchronous page and synchronous burst read/write operations. It is ideal for low voltage burst operating CPUs combining flash memory with high read performance.
 
* 4M X 16 Bit organization with upper and lower byte access
- Selective operation of asynchronous and synchronous access
- High performance asynchronous access
- 70ns Random Access Speed
- 20ns Page Mode Read Speed
- 16 words Page Mode Read
- High performance Synchronous access
- Burst frequency at 108MHz
- 33ns Initial Access Read / Write Speed at 108MHz
- 4, 8, 16 word Burst Mode Read / Write
- Burst Suspend feature
- 8, 16, and 32Mbit Partial Refresh Density
- Configuration Register set
- Bus Configuration Register(BCR)
- Refresh Configuration Register(RCR)
* Low Supply Voltage (1.7V ~1.95V)
* Deep Power Down
* Tri-state Output and TTL Compatible
* 54-ball FBGA package
 
Product No.
Voltage
(core)
Voltage
(I/O)
Read/Write
Mode
Package
Pin Count
 Access Time(ns) Operating
Temp		 data-
sheet		 Product
Status
SV6P6416RFA-70E
1.7V~1.95V
1.7V~1.95V
Async/
Page
fBGA
54
70/85
-25 ~ 85℃
  
E.S
SV6P6416XFA-70E
1.7V~1.95V
2.7V~3.3V
Async/
Page
fBGA
54
70/85
-25 ~ 85℃
  
E.S
SV6P6416XFA-70E
2.7V~3.3V
1.7V~1.95V
Async/
Page
fBGA
54
60/70
-25 ~ 85℃
  
E.S
SV6P6416UFA-70E
2.7V~3.3V
2.7V~3.3V
Async/
Page
fBGA
54
60/70
-25 ~ 85℃
  
E.S
SV6P6415RFA-70E
1.7V~1.95V
1.7V~1.95V
Async/
Page/
Burst
fBGA
54
70/85
-25 ~ 85℃
  
E.S
SV6P6415XFA-70E
1.7V~1.95V
2.7V~3.3V
Async/
Page/
Burst
fBGA
54
70/85
-25 ~ 85℃
  
E.S
SV6P6415XFA-70E
2.7V~3.3V
1.7V~1.95V
Async/
Page/
Burst
fBGA
54
60/70
-25 ~ 85℃
  
E.S
SV6P6415UFA-60E
2.7V~3.3V
2.7V~3.3V
Async/
Page/
Burst
fBGA
54
60/70
-25 ~ 85℃
 
E.S